2N3669功能参数封装等资料
元器型号: 2N3669
元器件品牌: GE[General Semiconductor]
封装:
功能描述: 125a
引脚数量:
适应温度: 最小 °C | 最大 °C
文件大小: KB
- 2N3600
HIGH-FREQUENCY OSCILLATORS AMPLIFIERS - 2N3605
TRANSISTOR | BJT | NPN | 14V V(BR)CEO | 200MA I(C) | TO-98 - 2N3606
TRANSISTOR | BJT | NPN | 14V V(BR)CEO | 200MA I(C) | TO-98 - 2N3607
TRANSISTOR | BJT | NPN | 14V V(BR)CEO | 200MA I(C) | TO-98 - 2N3611
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 7A I(C) | TO-3 - 2N3612
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 7A I(C) | TO-3 - 2N3613
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 7A I(C) | TO-3 - 2N3614
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 7A I(C) | TO-3 - 2N3615
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-3 - 2N3616
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-3 - 2N3617
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-3 - 2N3618
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-3 - 2N3619
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 2.5A I(C) | TO-5 - 2N3623
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 2.5A I(C) | TO-5 - 2N3627
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2.5A I(C) | TO-5