3N60功能参数封装等资料
元器型号: 3N60
元器件品牌: UTC[Unisonic Technologies]
封装:
功能描述: 600650
引脚数量:
适应温度: 最小 °C | 最大 °C
文件大小: KB
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TMOS POWER AMPERES 1000 VOLTS - 3N128
Silicon Transistor - 3N142
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR - 3N143
Silicon Transistor - 3N152
PWM/VFM Step-down DC/DC Converter - 3N153
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR - 3N154
SILICON TRANSISTOR - 3N155
TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72 - 3N158
TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72 - 3N159
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | TO-72 - 3N161
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH - 3N163
P-CHANNEL ENHANCEMENT MODE - 3N163-4
P-CHANNEL ENHANCEMENT MODE - 3N164
P-CHANNEL ENHANCEMENT MODE - 3N165
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier