2SB164006功能参数封装等资料
元器型号: 2SB164006
元器件品牌: Toshiba Semiconductor
封装:
功能描述:
引脚数量:
适应温度: 最小 °C | 最大 °C
文件大小: KB
- 2SB1640
TOSHIBA Transistor Silicon Triple Diffused Type - 2SB164006
Silicon Triple Diffused Type - 2SB1640_06
Silicon PNP Triple Diffused Type - 2SB1641
HIGH POWER SWITCHING APPLICATIONS - 2SB1642
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS - 2SB1643
Silicon epitaxial planar type(For power amplification) - 2SB1643P
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-221VAR - 2SB1643Q
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-221VAR - 2SB1644
Power Transistor (-80V, - 2SB1645
Silicon triple diffusion planar type Darlington(For power amplification) - 2SB1645P
TRANSISTOR | BJT | DARLINGTON | PNP | 160V V(BR)CEO | 8A I(C) | TO-247VAR - 2SB1645Q
TRANSISTOR | BJT | DARLINGTON | PNP | 160V V(BR)CEO | 8A I(C) | TO-247VAR - 2SB1647
Silicon Epitaxial Planar Transistor(Audio Series Regulator General Purpose) - 2SB1648
Silicon Epitaxial Planar Transistor(Audio, Series Regulator General Purpose) - 2SB1649
Silicon Triple Diffused Planar Transistor