2SD2353_06功能参数封装等资料
元器型号: 2SD2353_06
元器件品牌: Toshiba Semiconductor
封装:
功能描述:
引脚数量:
适应温度: 最小 °C | 最大 °C
文件大小: KB
- 2SD235
EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) - 2SD2350
TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 6A I(C) | TO-220 - 2SD2351
General Purpose Transistor 0.15A) - 2SD2351U
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR - 2SD2351V
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR - 2SD2351VWT106
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SC-70 - 2SD2351W
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR - 2SD2352
TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) - 2SD2353
TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) - 2SD235306
Silicon Triple Diffused Type - 2SD2353_06
Silicon NPN Triple Diffused Type - 2SD2356
TRANSISTORS(SELECTION GUIDE APPLICATIONS FUNCTIONS) - 2SD2357
Silicon epitaxial planer type(For low-frequency amplification) - 2SD2358
Transistors - 2SD2359
Silicon epitaxial planer type(For low-frequency amplification)