BF1012S功能参数封装等资料
元器型号: BF1012S
元器件品牌: Siemens Semiconductor Group
封装:
功能描述: 1ghz
引脚数量:
适应温度: 最小 °C | 最大 °C
文件大小: KB
- BF1005
Silicon N-Channel MOSFET Tetrode noise, high gain controlled input stages 1GHz Operating voltage Integrated stabilized bias network) - BF1005R
Silicon N-Channel MOSFET Tetrode - BF1005S
Silicon N-Channel MOSFET Tetrode noise, high gain controlled input stages 1GHz Operating voltage Integrated stabilized bias network) - BF1005SR
Silicon N-Channel MOSFET Tetrode - BF1005SW
Silicon N-Channel MOSFET Tetrode - BF1005W
Silicon N-Channel MOSFET Tetrode - BF1009
Silicon N-Channel MOSFET Tetrode noise, high gain controlled input stages 1GHz Operating voltage Integrated stabilized bias network - BF1009S
Silicon N-Channel MOSFET Tetrode noise, high gain controlled input stages 1GHz Operating voltage Integrated bias network) - BF1009SR
Silicon N-Channel MOSFET Tetrode - BF1009SW
TRANSISTOR | MOSFET | N-CHANNEL | 16V V(BR)DSS | 25MA I(D) | SOT-343R - BF100V
SSR CONTROL MODULE 0-10V - BF1012
Silicon N-Channel MOSFET Tetrode noise, high gain controlled input stages 1GHz Operating voltage Integrated stabilized bias network - BF1012S
Silicon N-Channel MOSFET Tetrode noise, high gain controlled input stages 1GHz Operating voltage Integrated stabilized bias network) - BF1012W
SILICON N-CHANNEL MOSFET TETRODE low-noise, gain-controlled input stages